US 12,336,267 B2
Semiconductor device
Hiroko Itokazu, Kawasaki (JP); Tomoko Matsudai, Shibuya (JP); Yoko Iwakaji, Meguro (JP); Takako Motai, Yokohama (JP); Keiko Kawamura, Yokohama (JP); and Kaori Fuse, Yokohama (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by KABUSHIKI KAISHA TOSHIBA, Tokyo (JP); and TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Tokyo (JP)
Filed on Sep. 10, 2021, as Appl. No. 17/472,465.
Claims priority of application No. 2020-156337 (JP), filed on Sep. 17, 2020.
Prior Publication US 2022/0085216 A1, Mar. 17, 2022
Int. Cl. H10D 8/00 (2025.01); H10D 12/00 (2025.01); H10D 64/00 (2025.01); H10D 84/60 (2025.01)
CPC H10D 8/422 (2025.01) [H10D 12/481 (2025.01); H10D 64/117 (2025.01); H10D 84/617 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first semiconductor layer of a first conductivity type;
a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, the second semiconductor layer including a first-conductivity-type impurity with a lower concentration than a concentration of a first-conductivity-type impurity in the first semiconductor layer;
a third semiconductor layer of a second conductivity type provided on the second semiconductor layer, the third semiconductor layer including a first surface at a side opposite to the second semiconductor layer, the first surface extending in a first direction and a second direction crossing the first direction;
a plurality of electrodes provided on the second semiconductor layer, the plurality of electrodes respectively extending inside trenches, the trenches each having depths enough to extend from the first surface into the second semiconductor layer; and
a first insulating film provided between the third semiconductor layer and one of the plurality of electrodes and between the second semiconductor layer and the one of the plurality of electrodes,
the plurality of electrodes including a first electrode group and a second electrode group,
the first electrode group being arranged in one column in the first direction and apart from each other by a first distance,
the second electrode group being arranged in another column in the first direction and apart from each other by the first distance,
the first electrode group and the second electrode group being apart from each other by a second distance in the second direction, the first distance being greater than the second distance,
each of the trenches having a first length in the first direction, and a second length in the second direction,
the second length being less than the first length, and
the first distance being less than the first length in the first and second electrode groups.