US 12,336,265 B2
Metal gate structures for field effect transistors
Chih-Wei Wang, Hsinchu (TW); Chia-Ming Tsai, Hsinchu (TW); Ke-Chih Liu, Hsinchu (TW); Chandrashekhar Prakash Savant, Hsinchu (TW); and Tien-Wei Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jan. 9, 2023, as Appl. No. 18/151,575.
Application 18/151,575 is a continuation of application No. 17/063,177, filed on Oct. 5, 2020, granted, now 11,552,178.
Application 17/063,177 is a continuation of application No. 16/438,168, filed on Jun. 11, 2019, granted, now 10,797,151, issued on Oct. 6, 2020.
Claims priority of provisional application 62/737,673, filed on Sep. 27, 2018.
Prior Publication US 2023/0163187 A1, May 25, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 64/66 (2025.01); H01L 21/28 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 64/667 (2025.01) [H01L 21/28088 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 62/115 (2025.01); H10D 84/0135 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a fin structure disposed on the substrate;
a dielectric stack surrounding a portion of the fin structure;
a stack of metal-based layers disposed on the dielectric stack;
a first titanium-aluminum (TiAl) layer comprising a first Al/Ti ratio disposed on the stack of metal-based layers; and
a second TiAl layer, disposed on the first TiAl layer, comprising a second Al/Ti ratio greater than the first Al/Ti ratio.