US 12,336,262 B2
Semiconductor device with contact structure and method for fabricating the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Sep. 19, 2023, as Appl. No. 18/369,962.
Application 18/369,962 is a division of application No. 17/953,046, filed on Sep. 26, 2022.
Prior Publication US 2024/0105807 A1, Mar. 28, 2024
Int. Cl. H01L 29/45 (2006.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)
CPC H10D 64/62 (2025.01) [H10D 64/01 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A contact structure, comprising:
an intervening conductive layer having a top surface;
a bottom conductive layer positioned on the intervening conductive layer, wherein a bottom surface of the bottom conductive layer is in contact with the top surface of the intervening conductive layer;
a conductive capping layer positioned on the bottom conductive layer, wherein the bottom conductive layer is positioned between the conductive capping layer and the intervening conductor layer; and
a top conductive layer positioned on the conductive capping layer;
wherein the intervening conductor layer, the bottom conductive layer, the conductive capping layer, and the top conductive layer are equal in width;
wherein the bottom conductive layer comprises germanium or silicon germanium;
wherein the bottom conductive layer comprises n-type dopants or p-type dopants;
wherein the top conductive layer comprises a metal and the conductive capping layer comprises a metal nitride derivatized from the metal of the top conductive layer;
wherein the p-type dopants comprise boron, aluminum, gallium, or indium; and the n-type dopants comprise antimony, arsenic, or phosphorus;
wherein a thickness ratio of a thickness of the intervening conductive layer to a thickness of the bottom conductive layer is between about 0.01 and about 0.15.