US 12,336,260 B2
Semiconductor device and method of manufacturing the same
Eunae Cho, Seoul (KR); Dongjin Lee, Seoul (KR); Ji Eun Lee, Suwon-si (KR); Kyoung-Ho Jung, Suwon-si (KR); Dong Su Ko, Seoul (KR); Yongsu Kim, Seongnam-si (KR); Jiho Yoo, Suwon-si (KR); Sung Heo, Suwon-si (KR); Hyun Park, Suwon-si (KR); Satoru Yamada, Seoul (KR); Moonyoung Jeong, Suwon-si (KR); Sungjin Kim, Suwon-si (KR); Gyeongsu Park, Hwaseong-si (KR); and Han Jin Lim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 7, 2023, as Appl. No. 18/219,525.
Application 18/219,525 is a continuation of application No. 17/400,901, filed on Aug. 12, 2021, granted, now 11,735,637.
Application 17/400,901 is a continuation of application No. 16/432,298, filed on Jun. 5, 2019, granted, now 11,127,828, issued on Sep. 21, 2021.
Application 16/432,298 is a continuation of application No. 14/854,272, filed on Sep. 15, 2015, granted, now 10,325,992, issued on Jun. 18, 2019.
Claims priority of application No. 10-2015-0029219 (KR), filed on Mar. 2, 2015.
Prior Publication US 2023/0352548 A1, Nov. 2, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 64/27 (2025.01); H01L 21/28 (2006.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01)
CPC H10D 64/513 (2025.01) [H01L 21/28088 (2013.01); H10D 64/667 (2025.01); H10D 64/685 (2025.01); H10D 64/691 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate comprising a trench,
a gate insulating film being a thin film disposed along an interior wall of the trench, the gate insulating film comprising silicon oxide (SiO2),
a gate electrode on the gate insulating film, the gate electrode comprising a gate conductor and a metal element that is intermingled with the gate conductor, the gate conductor comprising titanium (Ti) and nitrogen (N) and the metal element comprising lanthanum (La), strontium (Sr), yttrium (Y), lithium (Li), manganese (Mn), or a combination thereof, and
a filling conductor disposed on the gate electrode, the filling conductor including tungsten.