US 12,336,259 B2
Electronic device including two-dimensional material and method of fabricating the same
Minseok Yoo, Suwon-si (KR); Minsu Seol, Seoul (KR); Junyoung Kwon, Seoul (KR); Kyung-Eun Byun, Seongnam-si (KR); Hyeonjin Shin, Suwon-si (KR); and Van Luan Nguyen, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 8, 2021, as Appl. No. 17/545,373.
Claims priority of application No. 10-2021-0081032 (KR), filed on Jun. 22, 2021.
Prior Publication US 2022/0406911 A1, Dec. 22, 2022
Int. Cl. H10D 64/27 (2025.01); H01L 21/02 (2006.01); H10D 30/47 (2025.01); H10D 30/67 (2025.01); H10D 62/80 (2025.01); H10D 64/60 (2025.01)
CPC H10D 64/513 (2025.01) [H10D 30/6735 (2025.01); H10D 64/60 (2025.01)] 25 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first metal layer including a transition metal;
a second metal layer on the first metal layer and including gold (Au); and
a two-dimensional material layer between the first metal layer and the second metal layer and including a transition metal dichalcogenide (TMD) containing the transition metal of the first metal layer, wherein
the first metal layer and the second metal layer are different materials,
a width of the first metal layer in a first direction is greater than a width of the second metal layer in the first direction,
the first metal layer extends in the first direction,
the second metal layer extends in a second direction,
the second direction crosses the first direction, and
the first direction and the second direction intersect a thickness direction of the first metal layer and a thickness direction of the second metal layer.