| CPC H10D 64/258 (2025.01) [H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 30/6219 (2025.01); H10D 64/01 (2025.01)] | 20 Claims |
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1. A semiconductor structure, comprising:
an insulator;
a semiconductor fin protruding from the insulator;
a gate stack disposed on the semiconductor fin and the insulator;
a gate contact disposed on and electrically connected to the gate stack;
a source/drain material disposed on the semiconductor fin; and
a source/drain contact structure disposed on and electrically connected to the source/drain material;
wherein the semiconductor fin extends along a first direction, the gate stack extends along a second direction different from the first direction, and an offset S in the second direction between the gate contact and the source/drain contact structure satisfied: 0<S≤(W/2+D/2), wherein W is a width of the semiconductor fin, and D is a dimension of the gate contact.
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