| CPC H10D 64/258 (2025.01) [H10D 30/025 (2025.01); H10D 64/01 (2025.01); H10D 64/111 (2025.01); H10D 30/63 (2025.01); H10D 64/513 (2025.01)] | 17 Claims |
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1. A semiconductor device, comprising:
a first electrode;
a second electrode, a direction from the first electrode to the second electrode being along a first direction;
a third electrode, the third electrode including a third electrode end portion and a third electrode other end portion, the third electrode end portion being located between the first electrode and the third electrode other end portion in the first direction;
a first conductive member including a first conductive member end portion and a first conductive member other end portion, the first conductive member end portion being located between the first electrode and the first conductive member other end portion in the first direction, a position of the first conductive member end portion in the first direction being between a position of the first electrode in the first direction and a position of the third electrode end portion in the first direction, the first conductive member being electrically connected with one of the second electrode and the third electrode, or the first conductive member being configured to be electrically connected with the one of the second electrode and the third electrode;
a semiconductor member, the semiconductor member including a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type, and a third semiconductor region of the first conductive type,
the first semiconductor region including a first partial region and a second partial region,
the first partial region being located between the first electrode and the second electrode in the first direction,
the second semiconductor region being located between the first partial region and the third semiconductor region in the first direction,
the third semiconductor region being electrically connected with the second electrode,
a second direction from a part of the third electrode to the second semiconductor region crossing the first direction,
a direction from an other part of the third electrode to a part of the first partial region being along the second direction,
a direction from the second partial region to the first conductive member being along the first direction, and
a direction from the first conductive member to the first partial region being along the second direction; and
a first insulating member including silicon and oxygen, the first insulating member including a first position, a second position, and a third position, the first position being between the second partial region and the first conductive member end portion in the first direction, the second position being between the first conductive member and the first partial region in the second direction, a direction from the first position to the third position being along the second direction, a position of the third position in the first direction being between a position of the second partial region in the first direction and a position of the second position in the first direction, the first insulating member including a first element including at least one selected from the group consisting of nitrogen, aluminum, hafnium and zirconium at the third position, the first insulating member not including the first element at the first position and the second position, or each of a concentration of the first element at the first position and a concentration of the first element at the second position being lower than a concentration of the first element at the third position.
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