US 12,336,255 B2
Semiconductor die having a sodium stopper in an insulation layer groove and method of manufacturing the same
Oliver Blank, Villach (AT); Christof Altstätter, Amlach (AT); and Ingmar Neumann, Villach (AT)
Assigned to Infineon Technologies Austria AG, Villach (AT)
Filed by Infineon Technologies Austria AG, Villach (AT)
Filed on Jun. 1, 2023, as Appl. No. 18/327,112.
Application 18/327,112 is a continuation of application No. 17/156,693, filed on Jan. 25, 2021, granted, now 11,699,726.
Claims priority of application No. 20155344 (EP), filed on Feb. 4, 2020.
Prior Publication US 2023/0307512 A1, Sep. 28, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/40 (2006.01); H01L 21/765 (2006.01); H01L 23/00 (2006.01); H10D 30/66 (2025.01); H10D 64/00 (2025.01)
CPC H10D 64/117 (2025.01) [H01L 21/765 (2013.01); H01L 23/562 (2013.01); H10D 30/665 (2025.01)] 23 Claims
OG exemplary drawing
 
1. A semiconductor die, comprising:
a semiconductor body comprising an active region and an edge termination region;
an insulation layer on the semiconductor body; and
a sodium stopper formed in the insulation layer,
wherein the sodium stopper is arranged in an insulation layer groove which intersects the insulation layer vertically and extends uninterrupted around the active region,
wherein the sodium stopper is formed of a tungsten material that at least partly fills the insulation layer groove,
wherein both the insulation layer groove and the tungsten material extend into the semiconductor body.