US 12,336,253 B2
Semiconductor device and method for fabricating the same
Chun-Hsien Lin, Tainan (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Dec. 5, 2022, as Appl. No. 18/075,396.
Application 18/075,396 is a continuation of application No. 17/088,522, filed on Nov. 3, 2020, granted, now 11,552,181.
Claims priority of application No. 202011082680.8 (CN), filed on Oct. 12, 2020.
Prior Publication US 2023/0100606 A1, Mar. 30, 2023
Int. Cl. H10D 84/85 (2025.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01)
CPC H10D 64/021 (2025.01) [H01L 21/02071 (2013.01); H01L 21/02244 (2013.01); H01L 21/28123 (2013.01); H01L 21/32135 (2013.01); H01L 21/32139 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 64/017 (2025.01); H10D 64/671 (2025.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin-shaped structure extending along a first direction on a substrate according to a top view;
a first gate structure extending along a second direction adjacent to one side of the fin-shaped structure and not on top of the fin-shaped structure, wherein a first corner of the first gate structure adjacent to the fin-shaped structure comprises a first polymer stop layer; and
a second gate structure extending along the second direction adjacent to another side of the fin-shaped structure.