US 12,336,247 B2
Single crystal semiconductor structure and method of fabricating the same
Junhee Choi, Suwon-si (KR); Joohun Han, Hwaseong-si (KR); and Vladimir Matias, Santa Fe, NM (US)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and iBeam Materials, Inc., Santa Fe, NM (US)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and iBeam Materials, Inc., Santa Fe, NM (US)
Filed on Jan. 19, 2024, as Appl. No. 18/417,984.
Application 18/417,984 is a division of application No. 17/969,420, filed on Oct. 19, 2022, granted, now 11,916,111.
Application 17/969,420 is a division of application No. 17/100,340, filed on Nov. 20, 2020, granted, now 11,508,820, issued on Nov. 22, 2022.
Claims priority of provisional application 62/939,086, filed on Nov. 22, 2019.
Claims priority of application No. 10-2020-0026814 (KR), filed on Mar. 3, 2020.
Prior Publication US 2024/0154000 A1, May 9, 2024
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H10D 62/40 (2025.01); H10D 62/83 (2025.01)
CPC H10D 62/83 (2025.01) [H01L 21/02428 (2013.01); H01L 21/02488 (2013.01); H01L 21/0254 (2013.01); H01L 21/02546 (2013.01); H01L 21/0259 (2013.01); H01L 21/02617 (2013.01); H10D 62/40 (2025.01); H10D 62/402 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A single crystal semiconductor structure comprising:
an amorphous substrate;
a single crystal film formed directly on the amorphous substrate;
a single crystal semiconductor layer formed directly on the single crystal film, the single crystal semiconductor layer comprising a lower single crystal layer and an upper single crystal layer, and
a mask pattern between the lower single crystal layer and the upper single crystal layer,
wherein a lattice constant of the single crystal film is different from a lattice constant of the single crystal semiconductor layer.