US 12,336,246 B2
Semiconductor structures with a hybrid substrate
Ming-Shuan Li, Hsinchu County (TW); Chih Chieh Yeh, Taipei (TW); and Shih-Hao Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 2, 2021, as Appl. No. 17/465,214.
Claims priority of provisional application 63/185,130, filed on May 6, 2021.
Prior Publication US 2022/0359647 A1, Nov. 10, 2022
Int. Cl. H10D 62/40 (2025.01); H10D 30/67 (2025.01); H10D 64/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10D 62/405 (2025.01) [H10D 30/6735 (2025.01); H10D 64/017 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a substrate comprising a first wafer disposed over a second wafer, a top surface of the first wafer including a first crystal orientation and a top surface of the second wafer including a second crystal orientation different than the first crystal orientation;
performing an etching process to etch a first region of the first wafer and expose a portion of the second wafer under the first region to form a trench;
forming an epitaxial layer in the trench, a top surface of the epitaxial layer having the second crystal orientation, wherein the epitaxial layer contacts the first wafer at an interface;
epitaxially forming a vertical stack of alternating channel layers and sacrificial layers over the substrate, wherein top surfaces of the channel layers disposed directly over the first wafer comprise the first crystal orientation, and top surfaces of the channel layers disposed directly over the epitaxial layer comprise the second crystal orientation; and
patterning the vertical stack to form a first fin-shaped structure directly over the first wafer and a second fin-shaped structure over the epitaxial layer.