US 12,336,241 B2
Manufacturing method of a nanowire-based structure and capacitor array component including the structure
Julien El Sabahy, Grenoble (FR); Frédéric Voiron, Barraux (FR); and Guy Parat, Grenoble (FR)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP); and COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP); and COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Mar. 18, 2022, as Appl. No. 17/698,240.
Application 17/698,240 is a continuation of application No. PCT/EP2020/075860, filed on Sep. 16, 2020.
Claims priority of application No. 19306136 (EP), filed on Sep. 19, 2019.
Prior Publication US 2022/0208968 A1, Jun. 30, 2022
Int. Cl. H10D 62/10 (2025.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01)
CPC H10D 62/122 (2025.01) [H01L 21/02603 (2013.01); H01L 23/5223 (2013.01)] 2 Claims
OG exemplary drawing
 
1. A capacitor array component comprising a nanowire structure, said nanowire structure comprising:
a plurality of islands of conductive material provided on a substrate; and
conductive nanowires each having a first end that contacts an island of conductive material and a second end that extends away from the island of conductive material;
wherein different groups of the nanowires contact different islands of conductive material, and each island of conductive material comprises an anodic etch barrier layer and performs the function of a current collector for its group of contacting nanowires;
wherein a first stack of insulating and electrode layers is on a first group of nanowires contacting a first island of conductive material to form a first capacitor, and a second stack of insulating and electrode layers is on a second group of nanowires contacting a second island of conductive material to form a second capacitor electrically isolated from said first capacitor;
a conductive layer covering the first capacitor;
a passivation layer covering the conductive layer;
a first contact in a first opening extending through the passivation layer of the first capacitor and connected to the first island of conductive material on a portion of the first island of conductive material that extends past the first group of nanowires contacting the first island of conductive material; and
a second contact in a second opening extending through the conductive layer and the passivation layer of the first capacitor and connected to the electrode layer of the first stack.