US 12,336,239 B2
Tensile strained semiconductor monocrystalline nanostructure
Roger Loo, Leuven (BE); Geert Eneman, Heverlee (BE); and Clement Porret, Kessel-lo (BE)
Assigned to IMEC VZW, Leuven (BE)
Filed by IMEC VZW, Leuven (BE)
Filed on Apr. 26, 2021, as Appl. No. 17/240,694.
Claims priority of application No. 20171624 (EP), filed on Apr. 27, 2020.
Prior Publication US 2021/0336002 A1, Oct. 28, 2021
Int. Cl. H01L 29/06 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H10D 30/69 (2025.01); H10D 62/10 (2025.01); H10D 62/834 (2025.01)
CPC H10D 62/121 (2025.01) [H10D 30/797 (2025.01); H10D 62/834 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a semiconductor substrate having a top surface;
a dielectric layer formed on the semiconductor substrate; and
one or more group IV semiconductor monocrystalline nanostructures, each having a first extremity and a second extremity defining an axis parallel to the top surface of the semiconductor substrate and separated therefrom by the dielectric layer having a non-zero distance, each nanostructure of the one or more group IV semiconductor monocrystalline nanostructures having a source structure epitaxially grown on the first extremity and a drain structure epitaxially grown on the second extremity,
wherein the dielectric layer extends laterally beyond the first extremity and the second extremity along the axis parallel to the top surface;
wherein the group IV semiconductor of the source and drain structures include Si1−xGex when the semiconductor monocrystalline nanostructure on which they are grown comprises Si1−yGey wherein x>y≥0; and
wherein the source and drain structures are made of a group IV semiconductor doped with Sb, and optionally Bi and one or more of As and P, thereby creating tensile strain in the group IV semiconductor monocrystalline nanostructure.