US 12,336,237 B2
Source/drain regions of semiconductor device and method of forming the same
Wei-Min Liu, Hsinchu (TW); Li-Li Su, Chubei (TW); Chii-Horng Li, Zhubei (TW); and Yee-Chia Yeo, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 14, 2021, as Appl. No. 17/644,140.
Claims priority of provisional application 63/184,515, filed on May 5, 2021.
Prior Publication US 2022/0359653 A1, Nov. 10, 2022
Int. Cl. H10D 62/10 (2025.01); H10D 30/67 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 62/118 (2025.01) [H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first nanostructure over a semiconductor substrate;
a second nanostructure over the first nanostructure;
a gate structure surrounding the first nanostructure and the second nanostructure;
a first epitaxial region in the semiconductor substrate adjacent the gate structure, wherein the first epitaxial region is a first doped semiconductor material, wherein the first nanostructure overhangs a portion of the first epitaxial region; and
a second epitaxial region over the first epitaxial region, wherein the second epitaxial region is adjacent the first nanostructure and the second nanostructure, wherein the second epitaxial region is a second doped semiconductor material that is different from the first doped semiconductor material.