US 12,336,236 B2
Semiconductor device isolation features
Yu-Lien Huang, Jhubei (TW); Guan-Ren Wang, Hsinchu (TW); and Ching-Feng Fu, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 15, 2024, as Appl. No. 18/442,794.
Application 17/874,732 is a division of application No. 16/917,473, filed on Jun. 30, 2020, granted, now 11,545,546, issued on Jan. 3, 2023.
Application 18/442,794 is a continuation of application No. 17/874,732, filed on Jul. 27, 2022, granted, now 11,935,920.
Prior Publication US 2024/0222427 A1, Jul. 4, 2024
Int. Cl. H01L 29/06 (2006.01); H01L 21/764 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H10B 10/00 (2023.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 62/115 (2025.01) [H01L 21/764 (2013.01); H10B 10/12 (2023.02); H10D 30/6219 (2025.01); H10D 62/151 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a first source/drain region;
a second source/drain region;
an inter-layer dielectric over the first source/drain region and the second source/drain region;
a first source/drain contact extending through the inter-layer dielectric, the first source/drain contact connected to the first source/drain region;
a second source/drain contact extending through the inter-layer dielectric, the second source/drain contact connected to the second source/drain region; and
an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature comprising a dielectric liner and a void, the dielectric liner surrounding the void, the dielectric liner having a uniform thickness along a first sidewall of the first source/drain contact and a second sidewall of the second source/drain contact.