US 12,336,235 B2
Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same
Szu-Hua Chen, Tainan (TW); Cheng-Ming Lin, Kaohsiung (TW); Han-Yu Lin, Nantou County (TW); Wei-Yen Woon, Taoyuan (TW); Ming-Jie Huang, Hsinchu (TW); Ting-Gang Chen, Taipei (TW); Tai-Chun Huang, Hsin-Chu (TW); Ming-Chang Wen, Kaohsiung (TW); and Szuya Liao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 21, 2022, as Appl. No. 17/869,791.
Prior Publication US 2024/0030281 A1, Jan. 25, 2024
Int. Cl. H10D 62/10 (2025.01); H01L 21/28 (2025.01); H10D 62/13 (2025.01)
CPC H10D 62/115 (2025.01) [H01L 21/28194 (2013.01); H10D 62/151 (2025.01)] 14 Claims
OG exemplary drawing
 
12. A semiconductor device, comprising:
a channel structure, protruded from an isolation structure formed on a substrate, and extending along a first direction;
a channel isolation structure, extending between two separate sections of the channel structure along a second direction, wherein a wall portion of the channel isolation structure is located on the isolation structure, a protruding portion of the channel isolation structure extends into the substrate through the isolation structure, and a low-k dielectric material in the channel isolation structure comprises boron nitride; and
a gate structure, extending on the isolation structure along the second direction, and having two separate sections at opposite sides of the channel isolation structure and aligned with the channel isolation structure.