CPC H10D 62/102 (2025.01) [H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/112 (2025.01)] | 19 Claims |
1. A nitride-based semiconductor device, comprising:
a substrate;
a first nitride-based semiconductor layer disposed over the substrate;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region;
a doped III-V nitride-based semiconductor layer disposed over the second nitride-based semiconductor layer and having a substantially inverted trapezoidal cross-sectional shape that has a first surface close to the second nitride-based semiconductor layer and a second surface away from the second nitride-based semiconductor layer, wherein a length of an orthogonal projection of the first surface on the second nitride-based semiconductor layer is less than a length of an orthogonal projection of the second surface on the second nitride-based semiconductor layer, and a width of the cross-sectional shape decreases as the distance away from the second surface increases;
a gate electrode disposed on or above the doped III-V semiconductor layer and positioned on or above the second surface;
at least two source/drain (S/D) electrodes disposed over the second nitride-based semiconductor layer.
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