US 12,336,233 B2
GaN-based semiconductor device with reduced leakage current and method for manufacturing the same
Xiao Zhang, Suzhou (CN); Lijie Zhang, Suzhou (CN); Jue Ouyang, Suzhou (CN); and Wen-Yuan Hsieh, Suzhou (CN)
Assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou (CN)
Appl. No. 17/920,033
Filed by INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou (CN)
PCT Filed Jan. 25, 2022, PCT No. PCT/CN2022/073701
§ 371(c)(1), (2) Date Oct. 20, 2022,
PCT Pub. No. WO2023/141749, PCT Pub. Date Aug. 3, 2023.
Prior Publication US 2024/0222423 A1, Jul. 4, 2024
Int. Cl. H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01)
CPC H10D 62/102 (2025.01) [H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/112 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A nitride-based semiconductor device, comprising:
a substrate;
a first nitride-based semiconductor layer disposed over the substrate;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region;
a doped III-V nitride-based semiconductor layer disposed over the second nitride-based semiconductor layer and having a substantially inverted trapezoidal cross-sectional shape that has a first surface close to the second nitride-based semiconductor layer and a second surface away from the second nitride-based semiconductor layer, wherein a length of an orthogonal projection of the first surface on the second nitride-based semiconductor layer is less than a length of an orthogonal projection of the second surface on the second nitride-based semiconductor layer, and a width of the cross-sectional shape decreases as the distance away from the second surface increases;
a gate electrode disposed on or above the doped III-V semiconductor layer and positioned on or above the second surface;
at least two source/drain (S/D) electrodes disposed over the second nitride-based semiconductor layer.