US 12,336,227 B2
Thin film transistor, semiconductor substrate and X-ray flat panel detector
Jie Huang, Beijing (CN); Zhengliang Li, Beijing (CN); Ce Ning, Beijing (CN); Hehe Hu, Beijing (CN); Nianqi Yao, Beijing (CN); Kun Zhao, Beijing (CN); Fengjuan Liu, Beijing (CN); Tianmin Zhou, Beijing (CN); and Liping Lei, Beijing (CN)
Assigned to BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 17/763,297
Filed by BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Apr. 30, 2021, PCT No. PCT/CN2021/091596
§ 371(c)(1), (2) Date Mar. 24, 2022,
PCT Pub. No. WO2021/258858, PCT Pub. Date Dec. 30, 2021.
Claims priority of application No. 202010591840.5 (CN), filed on Jun. 24, 2020.
Prior Publication US 2022/0344517 A1, Oct. 27, 2022
Int. Cl. H10D 30/67 (2025.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01)
CPC H10D 30/6757 (2025.01) [H10D 30/6713 (2025.01); H10D 30/6755 (2025.01); H10D 86/0221 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A thin film transistor, comprising: a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode both electrically connected to the active layer, wherein,
the active layer comprises a channel layer and at least one channel protection layer which are overlapped in a stacking direction, and a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material,
the at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer comprise non-rare earth metal elements including In, Ga, Zn and Sn, wherein
the at least one channel protection layer comprises a first channel protection layer located at a side of the channel layer close to the source electrode and the drain electrode,
the channel layer comprises a first channel portion adjacent to the first channel protection layer and a second channel portion located at a side of the first channel portion away from the first channel protection layer in the stacking direction,
an absolute value of an energy band gap of the first channel portion is smaller than an absolute value of an energy band gap of the first channel protection layer, and an absolute value of an energy band gap of the second channel portion is smaller than the absolute value of the energy band gap of the first channel portion,
the first channel portion at least comprises a first surface of the channel layer that is in direct contact with the first channel protection layer, the first channel portion comprises at least one rare earth metal element that is as same as the at least one rare earth metal element in the first channel protection layer,
the second channel portion at least comprises a second surface of the channel layer away from the first channel protection layer, and the second channel portion does not contain any rare earth metal element that is as same as the at least one rare earth metal element in the first channel protection layer, and
metal elements of the channel layer comprise In, Ga and Zn.