US 12,336,225 B2
Thin-film transistor
Jung Bae Kim, San Jose, CA (US); Dong Kil Yim, Pleasanton, CA (US); and Soo Young Choi, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Appl. No. 17/289,570
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Jun. 4, 2020, PCT No. PCT/US2020/036134
§ 371(c)(1), (2) Date Apr. 28, 2021,
PCT Pub. No. WO2020/247640, PCT Pub. Date Dec. 10, 2020.
Claims priority of provisional application 62/857,065, filed on Jun. 4, 2019.
Prior Publication US 2022/0013670 A1, Jan. 13, 2022
Int. Cl. H10D 30/67 (2025.01)
CPC H10D 30/6757 (2025.01) [H10D 30/6713 (2025.01); H10D 30/6733 (2025.01); H10D 30/6755 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate;
a buffer layer disposed over the substrate;
a first semiconductor channel of a first thin film transistor (TFT), the first semiconductor channel disposed over the buffer layer, the first semiconductor channel having only two layers, the two layers being:
a first layer having a first electron mobility; and
a second layer contacting a lowermost surface of the first layer, wherein the second layer is disposed on the buffer layer and contacts the buffer layer, the second layer having a second electron mobility, and wherein the second layer comprises an electron mobility greater than the first layer wherein the first TFT has an electron mobility of about 35 cm2/V·s to about 70 cm2/V s;
a first gate insulator layer, the first gate insulator layer contacting the uppermost surface of the first layer;
a first gate electrode disposed over the first gate insulator layer of the first TFT;
a first inter-layer dielectric (ILD) layer disposed over the first gate electrode, the first ILD layer contacting both sides of the first gate insulator layer and contacting the uppermost surface of the first layer;
a first source electrode contacting the first layer of the first semiconductor channel, the first source electrode disposed in a source electrode via of the ILD layer; and
a first drain electrode contacting the first layer of the first semiconductor channel, the first drain electrode disposed in a first drain electrode via of the ILD layer.