| CPC H10D 30/6755 (2025.01) [H01L 23/5329 (2013.01); H10D 30/6729 (2025.01); H10D 30/673 (2025.01); H10D 30/6757 (2025.01); H10D 62/151 (2025.01); H10D 62/235 (2025.01); H10D 62/80 (2025.01); H10K 59/124 (2023.02)] | 22 Claims |
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1. A thin film transistor, comprising:
an active layer over a substrate and including an oxide semiconductor;
a gate electrode over the active layer and overlapping a channel region of the active layer, the channel region including at least one bent portion as seen in plan view;
a gate line electrically connected with the gate electrode;
a source electrode electrically connected with a source region of the active layer; and
a drain electrode electrically connected with a drain region of the active layer, wherein
a length of a straight line connecting a first contact part connecting the source region and the source electrode and a second contact part connecting the drain region and the drain electrode by a shortest distance is greater than a width of the gate line as seen in plan view, the width of the gate line being the smallest dimension of the gate line as seen in plan view, and
the width of the gate line is parallel to the straight line.
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