US 12,336,218 B2
Enhanced radio frequency switch and fabrication methods thereof
Shuming Xu, Shanghai (CN); and Hang Fan, Shanghai (CN)
Assigned to Powerlite Semiconductor (Shanghai) Co., Ltd., Shanghai (CN)
Filed by Powerlite Semiconductor (Shanghai) Co., Ltd, Shanghai (CN)
Filed on Nov. 10, 2021, as Appl. No. 17/523,437.
Claims priority of application No. 202111168228.8 (CN), filed on Sep. 29, 2021.
Prior Publication US 2023/0102053 A1, Mar. 30, 2023
Int. Cl. H10D 64/00 (2025.01); H10D 30/01 (2025.01); H10D 30/63 (2025.01); H10D 64/27 (2025.01); H10D 84/83 (2025.01)
CPC H10D 30/63 (2025.01) [H10D 30/025 (2025.01); H10D 64/518 (2025.01); H10D 84/83 (2025.01)] 13 Claims
OG exemplary drawing
 
1. A radio frequency (RF) switch device, comprising:
a semiconductor substrate, the substrate being doped with an impurity of a first conductivity type at a first doping concentration level;
at least one mesa extending vertically from an upper surface of the substrate and formed contiguous therewith, the mesa including a drift region doped with the impurity of the first conductivity type at a second doping concentration level, the second doping concentration level being less than the first doping concentration level, the mesa forming a primary current conduction path in the RF switch device;
an insulator layer disposed on at least a portion of the upper surface of the substrate and sidewalls of the mesa; and
at least one gate disposed on at least a portion of an upper surface of the insulator layer, the gate at least partially surrounding the mesa,
wherein the RF switch device is configured having single-pole multiple-throw functionality.