US 12,336,215 B2
Semiconductor device structure and method for forming the same
Lin-Yu Huang, Hsinchu (TW); Sheng-Tsung Wang, Hsinchu (TW); Li-Zhen Yu, New Taipei (TW); Huan-Chieh Su, Tianzhong Township, Changhua County (TW); Cheng-Chi Chuang, New Taipei (TW); and Chih-Hao Wang, Baoshan Township, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Sep. 8, 2021, as Appl. No. 17/469,499.
Claims priority of provisional application 63/209,559, filed on Jun. 11, 2021.
Prior Publication US 2022/0399461 A1, Dec. 15, 2022
Int. Cl. H10D 30/62 (2025.01); H10D 30/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 30/6211 (2025.01) [H10D 30/024 (2025.01); H10D 30/6219 (2025.01); H10D 84/013 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H10D 84/834 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a fin structure formed over a substrate;
a gate structure formed over the fin structure;
a first source/drain (S/D) structure formed adjacent to the gate structure;
a first S/D contact structure formed over the first S/D structure;
a first layer formed over the first S/D structure, wherein the first S/D contact structure is surrounded by the first layer, and a portion of the first layer is lower than a bottom surface of the gate structure; and
a dielectric layer formed adjacent to the gate structure and the first layer, wherein the dielectric layer and the first layer are made of different materials, and the first layer is surrounded by the dielectric layer.