US 12,336,212 B2
High electron mobility transistor structure and method of manufacturing the same
Po-Jung Lin, Hsinchu (TW); and Jia-Zhe Liu, Hsinchu (TW)
Assigned to GLOBALWAFERS CO., LTD., Hsinchu (TW)
Filed by GLOBALWAFERS CO., LTD., Hsinchu (TW)
Filed on Nov. 17, 2022, as Appl. No. 17/988,849.
Claims priority of application No. 111109211 (TW), filed on Mar. 14, 2022.
Prior Publication US 2023/0290872 A1, Sep. 14, 2023
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/4755 (2025.01) [H10D 30/015 (2025.01); H10D 62/221 (2025.01); H10D 62/8503 (2025.01)] 8 Claims
OG exemplary drawing
 
1. An improved high electron mobility transistor (HEMT) structure, comprising in order:
a substrate;
a nitride nucleation layer;
a nitride buffer layer comprising a metal dopant;
a nitride channel layer having a metal doping concentration less than a metal doping concentration of the nitride buffer layer; and
a barrier layer, wherein a two-dimensional electron gas is formed in the nitride channel layer along an interface between the nitride channel layer and the barrier layer;
wherein a metal doping concentration X at an interface between the nitride buffer layer and the nitride channel layer is defined as a number of metal atoms per cubic centimeter, and a thickness Y of the nitride channel layer is in microns (μm) and satisfies Y≤(0.2171)ln(X)−8.34.