US 12,336,210 B2
Source/drain structure for semiconductor device
Chien-Wei Lee, Kaohsiung (TW); Chii-Horng Li, Zhubei (TW); Heng-Wen Ting, Hsinchu (TW); Yee-Chia Yeo, Hsinchu (TW); Yen-Ru Lee, Hsinchu (TW); Chih-Yun Chin, Taichung (TW); Chih-Hung Nien, Changhua (TW); and Jing-Yi Yan, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 6, 2023, as Appl. No. 18/165,117.
Application 18/165,117 is a continuation of application No. 17/207,359, filed on Mar. 19, 2021, granted, now 11,575,026.
Prior Publication US 2023/0187540 A1, Jun. 15, 2023
Int. Cl. H10D 30/01 (2025.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H10D 30/62 (2025.01); H10D 62/13 (2025.01); H10D 62/834 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 30/024 (2025.01) [H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/2257 (2013.01); H10D 30/62 (2025.01); H10D 62/151 (2025.01); H10D 62/834 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 30/6219 (2025.01)] 20 Claims
OG exemplary drawing
 
15. A semiconductor structure, comprising:
a fin structure on a substrate:
an epitaxial layer on the fin structure and doped with dopants;
a silicide layer on the epitaxial layer; and
a plurality of dopant clusters embedded in the epitaxial layer and adjacent to the silicide layer, wherein the plurality of dopant clusters have a concentration greater than a maximum doping concentration determined by a solid solubility limit of the dopants in the epitaxial layer.