US 12,336,204 B2
Tunneling transistor
Gao-Tian Lu, Beijing (CN); Yang Wei, Beijing (CN); Shou-Shan Fan, Beijing (CN); and Yue-Gang Zhang, Beijing (CN)
Assigned to Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed by Tsinghua University, Beijing (CN); and HON HAI PRECISION INDUSTRY CO., LTD., New Taipei (TW)
Filed on Oct. 20, 2021, as Appl. No. 17/505,815.
Claims priority of application No. 202110837508.7 (CN), filed on Jul. 23, 2021.
Prior Publication US 2023/0022711 A1, Jan. 26, 2023
Int. Cl. H10K 10/46 (2023.01); H10D 10/00 (2025.01); H10D 30/67 (2025.01); H10K 85/20 (2023.01)
CPC H10D 10/231 (2025.01) [H10D 30/6713 (2025.01); H10K 10/486 (2023.02); H10K 85/221 (2023.02)] 12 Claims
OG exemplary drawing
 
1. A tunneling transistor, comprising:
a gate;
an insulating layer placed on the gate;
a carbon nanotube located on a surface of the insulating layer away from the gate, wherein only one carbon nanotube is located on the surface of the insulating layer and the carbon nanotube is semiconducting;
a film-like structure, wherein the film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film;
a source electrode electrically connected to the film-like structure; and
a drain electrode electrically connected to the carbon nanotube.