US 12,336,201 B2
Capacitor structure and method of making the same
Jian-Shiou Huang, Fangliao Township (TW); Chia-Shiung Tsai, Hsin-Chu (TW); Cheng-Yuan Tsai, Chu Pei (TW); Hsing-Lien Lin, Hsin-Chu (TW); and Yao-Wen Chang, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Jun. 14, 2021, as Appl. No. 17/346,435.
Application 17/346,435 is a division of application No. 14/609,159, filed on Jan. 29, 2015, granted, now 11,038,010.
Prior Publication US 2021/0305357 A1, Sep. 30, 2021
Int. Cl. H10D 1/68 (2025.01); H01L 21/02 (2006.01); H10B 63/00 (2023.01)
CPC H10D 1/696 (2025.01) [H01L 21/02247 (2013.01); H01L 21/02249 (2013.01); H01L 2924/1205 (2013.01); H10D 1/68 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a semiconductor substrate;
a conductor-insulator-conductor capacitor over the semiconductor substrate, comprising:
a first conductor, wherein:
there is no physical interface between a bottom surface of the first conductor and a top surface of the first conductor, and
a via hole is defined by the first conductor that extends from the top surface of the first conductor toward the bottom surface of the first conductor but does not extend to the bottom surface of the first conductor;
a dielectric layer over the first conductor and in contact with the top surface of the first conductor, wherein the dielectric layer does not contain tantalum;
a first nitrogenous film over the dielectric layer and in contact with the dielectric layer;
a first blocking film over the first nitrogenous film and directly contacting the first nitrogenous film, wherein the first blocking film comprises titanium nitride and has a uniform composition;
a second nitrogenous film over the first blocking film and directly contacting the first blocking film, wherein the second nitrogenous film has a uniform composition;
a second blocking film over the second nitrogenous film and directly contacting the second nitrogenous film, wherein the second blocking film comprises tantalum nitride and has a uniform composition; and
a second conductor over the second blocking nitrogenous film; and
an upper layer contacting a first sidewall of the dielectric layer, a second sidewall of the dielectric layer, and a top surface of the second conductor extending between the first sidewall and the second sidewall.