US 12,336,185 B2
Memory device assembly with non-impinged leaker devices
Beth R. Cook, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Jul. 27, 2022, as Appl. No. 17/815,420.
Claims priority of provisional application 63/365,639, filed on Jun. 1, 2022.
Prior Publication US 2023/0397435 A1, Dec. 7, 2023
Int. Cl. H10B 53/30 (2023.01); G11C 11/22 (2006.01)
CPC H10B 53/30 (2023.02) 25 Claims
OG exemplary drawing
 
1. An integrated assembly, comprising:
a cell plate;
a first pillar that includes a first bottom electrode and a first leaker device that couples the first bottom electrode to the cell plate;
a second pillar that includes a second bottom electrode and a second leaker device that couples the second bottom electrode to the cell plate;
a third pillar that includes a third bottom electrode and a third leaker device that couples the third bottom electrode to the cell plate;
a fourth pillar that includes a fourth bottom electrode and a fourth leaker device that couples the fourth bottom electrode to the cell plate;
an insulator in contact with the first leaker device, the second leaker device, the third leaker device, and the fourth leaker device,
wherein the insulator is not directly on top of any of the first leaker device, the second leaker device, the third leaker device, or the fourth leaker device; and
a top electrode separated from the first bottom electrode, the second bottom electrode, the third bottom electrode, and the fourth bottom electrode by the insulator.