US 12,336,181 B2
Three-dimensional memory device having source-select-gate cut structures and methods for forming the same
Zhong Zhang, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Nov. 24, 2023, as Appl. No. 18/518,798.
Application 18/518,798 is a continuation of application No. 17/162,861, filed on Jan. 29, 2021, granted, now 11,871,573.
Application 17/162,861 is a continuation of application No. PCT/CN2020/139340, filed on Dec. 25, 2020.
Prior Publication US 2024/0090227 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10B 43/35 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01)
CPC H10B 43/35 (2023.02) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A three-dimensional (3D) memory device, comprising:
a memory stack comprising a memory block, the memory block comprising memory array structures and a staircase structure in a first lateral direction, and fingers in a second lateral direction perpendicular to the first lateral direction, the fingers comprising a first finger and a second finger; and
a source-select-gate (SSG) cut structure extending through a portion of the memory stack and between the first finger and the second finger,
wherein the staircase structure comprises a first staircase connected to first memory cells in the first finger and a second staircase connected to second memory cells in the second finger.