US 12,334,913 B2
DrMOS, integrated circuit, electronic device, and preparation method
Fayou Yin, Shenzhen (CN); Boning Huang, Dongguan (CN); Wentao Yang, Dongguan (CN); Quan Zhang, Shenzhen (CN); and Qian Zhao, Chengdu (CN)
Assigned to HUAWEI TECHNOLOGIES CO., LTD., Shenzhen (CN)
Filed by HUAWEI TECHNOLOGIES CO., LTD., Guangdong (CN)
Filed on Feb. 17, 2023, as Appl. No. 18/170,575.
Application 18/170,575 is a continuation of application No. PCT/CN2020/110072, filed on Aug. 19, 2020.
Prior Publication US 2023/0198512 A1, Jun. 22, 2023
Int. Cl. H03K 17/0412 (2006.01); H03K 17/16 (2006.01)
CPC H03K 17/04123 (2013.01) [H03K 17/162 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A driver metal-oxide-semiconductor field-effect transistor (DrMOS) comprising: a first die and a second die, wherein
the first die comprises a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor;
the second die comprises a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor; and
a substrate, and the substrate is configured to carry the first die and the second die; wherein
a source and the gate of the second switching transistor are in contact with the substrate; and
the first switching transistor is a laterally diffused metal oxide semiconductor LDMOS transistor, and the second switching transistor is a split gate trench metal oxide semiconductor SGT MOS transistor.