US 12,334,906 B2
Multi-layer resonator assembly and method for fabricating same
Lovelace Soirez, Andover, MA (US); and Jeffrey R. LaRoche, Andover, MA (US)
Assigned to RAYTHEON COMPANY, Waltham, MA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on Dec. 30, 2021, as Appl. No. 17/566,144.
Prior Publication US 2023/0216480 A1, Jul. 6, 2023
Int. Cl. H03H 9/17 (2006.01); H03H 3/02 (2006.01); H10D 30/47 (2025.01); H10N 39/00 (2023.01)
CPC H03H 9/178 (2013.01) [H03H 3/02 (2013.01); H03H 9/173 (2013.01); H10D 30/475 (2025.01); H10N 39/00 (2023.02); H03H 2003/021 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method for fabricating a multi-layer resonator assembly, the method comprising:
sequentially fabricating a plurality of vertically-stacked resonator layers, wherein fabricating each resonator layer of the plurality of resonator layers includes,
depositing a dielectric layer on an outer dielectric surface;
forming at least one film bulk acoustic resonator (FBAR) cavity in the deposited dielectric layer;
filling each FBAR cavity of the at least one FBAR cavity with a sacrificial material block; and
depositing a FBAR material stack over the at least one FBAR cavity, the deposited FBAR material stack in contact with the sacrificial material block and the dielectric layer; and
removing the sacrificial material block from the at least one FBAR cavity for each resonator layer of the plurality of resonator layers subsequent to sequentially fabricating the plurality of resonator layers;
wherein the deposited FBAR material stack of a first of the plurality resonator layer is electrically connected to the deposited FBAR material stack of a second of the plurality of resonator layers forming a filter network.