US 12,334,903 B2
Substrate comprising acoustic resonators configured as at least one acoustic filter
Jonghae Kim, San Diego, CA (US); Je-Hsiung Lan, San Diego, CA (US); and Ranadeep Dutta, Del Mar, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Aug. 31, 2020, as Appl. No. 17/008,320.
Prior Publication US 2022/0069797 A1, Mar. 3, 2022
Int. Cl. H03H 9/05 (2006.01); H03H 3/02 (2006.01); H03H 3/08 (2006.01); H03H 9/10 (2006.01); H03H 9/205 (2006.01); H03H 9/25 (2006.01); H03H 9/56 (2006.01); H03H 9/64 (2006.01); H03H 9/70 (2006.01); H03H 9/72 (2006.01)
CPC H03H 9/058 (2013.01) [H03H 3/02 (2013.01); H03H 3/08 (2013.01); H03H 9/0504 (2013.01); H03H 9/0571 (2013.01); H03H 9/0576 (2013.01); H03H 9/1007 (2013.01); H03H 9/1064 (2013.01); H03H 9/205 (2013.01); H03H 9/25 (2013.01); H03H 9/568 (2013.01); H03H 9/6483 (2013.01); H03H 9/706 (2013.01); H03H 9/725 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A substrate comprising:
an encapsulation layer having a fixed thickness;
a first acoustic resonator located in the encapsulation layer, wherein the first acoustic resonator comprises:
a first substrate; and
a first piezoelectric layer coupled to the first substrate, wherein the first substrate and the first piezoelectric layer comprise a combined first thickness;
a second acoustic resonator located in the encapsulation layer, wherein the second acoustic resonator comprises:
a second substrate; and
a second piezoelectric layer coupled to the second substrate, wherein the second substrate and the second piezoelectric layer comprise a combined second thickness that is different than the first thickness,
wherein the second piezoelectric layer is a separate piezoelectric layer from the first piezoelectric layer,
wherein the second substrate is a separate substrate from the first substrate,
wherein the second acoustic resonator is located laterally to the first acoustic resonator in the encapsulation layer, and
wherein the second acoustic resonator does not vertically overlap with the first acoustic resonator;
at least one first dielectric layer coupled to a first surface of the encapsulation layer;
a plurality of first interconnects coupled to the first surface of the encapsulation layer, wherein the plurality of first interconnects is located at least partially in the at least one first dielectric layer;
at least one second dielectric layer coupled to a second surface of the encapsulation layer, wherein each of the at least one first electric layer and the at least second dielectric layer includes a material that is different from the encapsulation layer;
a plurality of second interconnects coupled to the second surface of the encapsulation layer, wherein the plurality of second interconnects is located at least in the at least one second dielectric layer; and
a matching inductor or matching capacitor coupled to at least one of the first acoustic resonator or the second acoustic resonator,
wherein the first acoustic resonator is one of an acoustic wave (SAW) device, a bulk acoustic wave (BAW) device, a thin-film bulk acoustic wave resonator (FBAR) or a contour mode resonator (CMR), and
wherein the second acoustic resonator is a different type of acoustic resonator from the first acoustic resonator.