US 12,334,884 B2
Power amplification device and an RF circuit module
Mitsunori Samata, Nagaokakyo (JP); Satoshi Arayashiki, Nagaokakyo (JP); Koshi Himeda, Nagaokakyo (JP); and Masayuki Aoike, Nagaokakyo (JP)
Assigned to Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed by Murata Manufacturing Co., Ltd., Kyoto-fu (JP)
Filed on Dec. 13, 2021, as Appl. No. 17/644,035.
Claims priority of application No. 2020-209635 (JP), filed on Dec. 17, 2020.
Prior Publication US 2022/0200551 A1, Jun. 23, 2022
Int. Cl. H03F 3/195 (2006.01); H01L 23/66 (2006.01); H03F 1/56 (2006.01); H03F 3/24 (2006.01)
CPC H03F 3/245 (2013.01) [H01L 23/66 (2013.01); H03F 1/565 (2013.01); H03F 3/195 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6655 (2013.01); H03F 2200/451 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An RF circuit module comprising:
a module substrate;
a first member in which a first circuit is configured;
a second member in which a second circuit is configured; and
a member-member connection conductor is a conductor configured in or on either the first member or the second member and is configured to electrically connect the first circuit and the second circuit to each other without using the module substrate, wherein
the second member is mounted on the first member,
the second circuit includes a first amplifier configured to amplify a radio frequency signal to output a first amplified signal,
the first circuit includes a control circuit configured to control an operation of the second circuit,
the first member is a flip chip bonded to the module substrate, and
at least part of a first termination circuit, which is connected to the first amplifier through the member-member connection conductor and which is configured to attenuate a harmonic wave component of the first amplified signal, is configured in the first member.