US 12,334,807 B2
Drive adjustment circuit for power semiconductor element, power module, and power conversion device
Kenichi Morokuma, Tokyo (JP); and Takuya Sakai, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/927,010
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jul. 14, 2020, PCT No. PCT/JP2020/027387
§ 371(c)(1), (2) Date Nov. 22, 2022,
PCT Pub. No. WO2022/013947, PCT Pub. Date Jan. 20, 2022.
Prior Publication US 2023/0198373 A1, Jun. 22, 2023
Int. Cl. H02M 1/08 (2006.01); H02M 1/00 (2007.01)
CPC H02M 1/08 (2013.01) [H02M 1/0029 (2021.05); H02M 1/0048 (2021.05)] 19 Claims
OG exemplary drawing
 
1. A drive adjustment circuit for a power semiconductor element, comprising:
a differentiating circuit to differentiate a gate voltage of a power semiconductor element;
a power supply to generate a comparison reference voltage;
a comparator having a first input terminal connected to the differentiating circuit and a second input terminal receiving the comparison reference voltage; and
a voltage adjusting circuit having one terminal connected to a gate terminal of the power semiconductor element and the other terminal connected to an output terminal of the comparator to adjust the gate voltage of the power semiconductor element, based on an output of the comparator, wherein the voltage adjusting circuit has a function of sinking gate current of the power semiconductor element based on an output voltage of the differentiating circuit.