| CPC H01S 5/3432 (2013.01) [H01S 5/3436 (2013.01); H10H 20/812 (2025.01)] | 19 Claims |

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1. A light emission source comprising:
an active region having a plurality of InP quantum dots (QDs) epitaxially grown therein, the active region operable to convert electrical current into light emission;
a first barrier layer grown below the active region;
a second barrier layer grown on top of the active region; and
a first carrier blocking layer grown below the first barrier layer.
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