US 12,334,713 B2
Methods for forming a vertical cavity surface emitting laser device
Benjamin Kesler, Sunnyvale, CA (US); Ajit Vijay Barve, San Jose, CA (US); Jun Yang, Cupertino, CA (US); Guowei Zhao, Milpitas, CA (US); and Matthew Glenn Peters, Menlo Park, CA (US)
Assigned to Lumentum Operations LLC, San Jose, CA (US)
Filed by Lumentum Operations LLC, San Jose, CA (US)
Filed on Jun. 30, 2021, as Appl. No. 17/364,287.
Claims priority of provisional application 63/132,222, filed on Dec. 30, 2020.
Prior Publication US 2022/0209506 A1, Jun. 30, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/343 (2013.01) [H01S 5/18311 (2013.01); H01S 5/18325 (2013.01); H01S 5/18361 (2013.01); H01S 5/3095 (2013.01); H01S 5/3416 (2013.01); H01S 2304/02 (2013.01); H01S 2304/04 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a bottom emitting vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence, comprising:
forming, using a metal-organic chemical vapor deposition (MOCVD) process in an MOCVD processing environment during an MOCVD phase of the multiphase growth sequence, an epitaxial structure comprising:
a first n-doped distributed Bragg reflector (DBR) a first mirror over a substrate,
a tunnel junction over the first doped DBR,
an oxidation aperture (OA) layer over the tunnel junction, and
a p-doped DBR over the OA layer;
moving, during a transition period following the MOCVD phase, the epitaxial structure from the MOCVD processing environment to a molecular beam epitaxy (MBE) processing environment; and
forming, using an MBE process in the MBE processing environment during an MBE phase of the multiphase growth sequence and after the transition period:
an active region over the p-doped DBR,
a second n-doped DBR over the active region, and
a contact layer over the second doped DBR.