US 12,334,712 B2
Optical semiconductor integrated element and method of manufacturing optical semiconductor integrated element
Tsutomu Yamaguchi, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/600,811
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jun. 11, 2019, PCT No. PCT/JP2019/023014
§ 371(c)(1), (2) Date Oct. 1, 2021,
PCT Pub. No. WO2020/250291, PCT Pub. Date Dec. 17, 2020.
Prior Publication US 2022/0200242 A1, Jun. 23, 2022
Int. Cl. H01S 5/22 (2006.01); H01S 5/026 (2006.01); H01S 5/343 (2006.01)
CPC H01S 5/22 (2013.01) [H01S 5/0262 (2013.01); H01S 5/0264 (2013.01); H01S 5/0265 (2013.01); H01S 5/34313 (2013.01)] 10 Claims
OG exemplary drawing
 
1. An optical semiconductor integrated element comprising a laser section which constitutes a semiconductor laser and a photodetector section which constitutes a photodetector in which the laser section and the photodetector section are arranged on a same semiconductor substrate and along an optical axis of a laser of the laser section,
the laser section and the photodetector section have, in order from a side closest to the semiconductor substrate, a light confining layer which confines light, a cladding layer and a contact layer that is formed of an InGaAs layer or an InGaAsP layer, and
the light confining layer of the laser section is an active layer, the contact layer of the photodetector section is a light absorption layer, wherein
the cladding layer in a cross section which is perpendicular to the optical axis has a ridge structure in which a width at a side of the light confining layer is narrower than a width at a side of the contact layer, on a side surface of the light confining layer, the cladding layer and the contact layer, a semiconductor embedded layer is not provided,
a side surface of the cladding layer and the contact layer are covered with an insulating film,
a side surface of the ridge structure of the photodetector section is covered with a metal such that the insulating film insulates the metal from making electrical contact with the contact layer.