US 12,334,711 B2
Fabricating semiconductor devices, such as VCSELs, with an oxide confinement layer
Yuri Berk, Kiryat Tivon (IL); Vladimir Iakovlev, Ecublens (IL); Anders Larsson, Hovas (SE); Itshak Kalifa, Bat—Yam (IL); Matan Galanty, Korazim (IL); Isabelle Cestier, Haifa (IL); and Elad Mentovich, Tel Aviv (IL)
Assigned to Mellanox Technologies, Ltd., Yokneam (IL)
Filed by Mellanox Technologies, Ltd., Yokneam (IL)
Filed on May 19, 2021, as Appl. No. 17/303,050.
Prior Publication US 2022/0376476 A1, Nov. 24, 2022
Int. Cl. H01S 5/183 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01); H01S 5/42 (2006.01); H01S 5/042 (2006.01)
CPC H01S 5/18311 (2013.01) [H01S 5/3416 (2013.01); H01S 5/34306 (2013.01); H01S 5/423 (2013.01); H01S 5/04257 (2019.08)] 20 Claims
OG exemplary drawing
 
1. A method for forming an at least partially oxidized confinement layer of a semiconductor device, the method comprising:
forming a to-be-oxidized layer of a semiconductor device on a substrate, wherein the to-be-oxidized layer has a first surface and a second surface opposite the first surface;
forming an exposed layer having a first surface and a second surface opposite the first surface such that the second surface of the exposed layer is immediately adjacent to the first surface of the to-be-oxidized layer, and such that the to-be-oxidized layer is disposed between the substrate and the exposed layer;
etching the exposed layer, using a masking process on the exposed layer and before forming another semiconductor layer of the semiconductor device immediately adjacent to the first surface of the exposed layer, to form a pattern of holes that extend through the exposed layer at least to the first surface of the to-be-oxidized layer and not through the second surface of the to-be-oxidized layer, the first surface of the to-be-oxidized layer being a surface of the to-be-oxidized layer that is parallel to a level plane defined by a surface of the substrate that is closest to the exposed layer, each hole of the pattern of holes extending in a direction that is transverse to the level plane; and
oxidizing, before forming the other semiconductor layer of the semiconductor device immediately adjacent to the first surface of the exposed layer, the to-be-oxidized layer through the pattern of holes by exposing the to-be-oxidized layer and the exposed layer of the semiconductor device to an oxidizing gas to form a confinement layer.