US 12,334,710 B2
Photonic crystal surface-emitting laser
Tien-Chang Lu, Guangdong (CN); Kuo-Bin Hong, Guangdong (CN); Lih-Ren Chen, Guangdong (CN); and Ten-Hsing Jaw, Guangdong (CN)
Assigned to Interface Technology (ChengDu) Co., Ltd., Sichuan (CN); Interface Optoelectronics (ShenZhen) Co., Ltd., Guangdong (CN); and General Interface Solution Limited, Miaoli County (TW)
Filed by Interface Technology (ChengDu) Co., Ltd., Sichuan (CN); Interface Optoelectronics (ShenZhen) Co., Ltd., Guangdong (CN); and General Interface Solution Limited, Miaoli County (TW)
Filed on Sep. 24, 2021, as Appl. No. 17/448,706.
Claims priority of application No. 202110948096.4 (CN), filed on Aug. 18, 2021.
Prior Publication US 2023/0055037 A1, Feb. 23, 2023
Int. Cl. H01S 5/183 (2006.01); H01S 5/0225 (2021.01); H01S 5/11 (2021.01); H01S 5/34 (2006.01)
CPC H01S 5/11 (2021.01) [H01S 5/0225 (2021.01); H01S 5/18391 (2013.01); H01S 5/3416 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A photonic crystal surface-emitting laser, comprising:
a substrate;
an n-type cladding layer disposed over the substrate;
an active layer disposed over the n-type cladding layer;
a photonic crystal structure disposed over the active layer;
a p-type cladding layer disposed over the photonic crystal structure;
a first n-type semiconductor layer disposed over the p-type cladding layer; and
a meta-surface structure disposed on a surface of the first n-type semiconductor layer away from the p-type cladding layer, wherein the meta-surface structure is an additional layer attached to and in contact with the surface of the first n-type semiconductor layer away from the p-type cladding layer.