US 12,334,706 B2
Light emitting element, light emitting element array, and method of manufacturing light emitting element array
Tatsushi Hamaguchi, Tokyo (JP); Kentaro Hayashi, Tokyo (JP); Masamichi Ito, Tokyo (JP); Mikihiro Yokozeki, Tokyo (JP); and Rintaro Koda, Tokyo (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Appl. No. 17/613,816
Filed by SONY GROUP CORPORATION, Tokyo (JP)
PCT Filed May 25, 2020, PCT No. PCT/JP2020/020451
§ 371(c)(1), (2) Date Nov. 23, 2021,
PCT Pub. No. WO2020/246280, PCT Pub. Date Dec. 10, 2020.
Claims priority of application No. 2019-104380 (JP), filed on Jun. 4, 2019; and application No. 2020-083889 (JP), filed on May 12, 2020.
Prior Publication US 2022/0247149 A1, Aug. 4, 2022
Int. Cl. H01S 5/02 (2006.01); H01S 5/42 (2006.01)
CPC H01S 5/0207 (2013.01) [H01S 5/423 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A light emitting element array, comprising:
a plurality of light emitting elements, wherein each light emitting element of the plurality of light emitting elements comprises:
a stacked structure that includes a stack of
a first compound semiconductor layer that has a first surface and a second surface, wherein the second surface is opposite to the first surface,
an active layer that faces the second surface of the first compound semiconductor layer, and
a second compound semiconductor layer that has a third surface and a fourth surface, wherein
the third surface faces the active layer, and
the fourth surface is opposite to the third surface;
a first light reflection layer on a first portion of a base part surface, wherein the base part surface is located on a side of the first surface of the first compound semiconductor layer; and
a second light reflection layer on a side of the fourth surface of the second compound semiconductor layer, wherein
the second light reflection layer has a flat shape,
the base part surface extends to a peripheral region surrounded by the plurality of light emitting elements,
the base part surface has a concavo-convex shape,
the first portion of the base part surface has an upwardly convex shape with respect to the second surface of the first compound semiconductor layer, and
the base part surface is differentiable.