US 12,334,559 B2
Negative electrode material, negative electrode plate, electrochemical device, and electronic device
Qunchao Liao, Fujian (CN); Hang Cui, Fujian (CN); Yuansen Xie, Fujian (CN); and Chao Wang, Fujian (CN)
Assigned to Ningde Amperex Technology Limited, Ningde (CN)
Filed by NINGDE AMPEREX TECHNOLOGY LIMITED, Fujian (CN)
Filed on Mar. 9, 2022, as Appl. No. 17/690,252.
Application 17/690,252 is a continuation of application No. PCT/CN2020/081305, filed on Mar. 26, 2020.
Prior Publication US 2022/0199996 A1, Jun. 23, 2022
Int. Cl. H01M 4/587 (2010.01); H01M 4/04 (2006.01); H01M 4/1393 (2010.01); H01M 4/1395 (2010.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 4/66 (2006.01); H01M 10/0525 (2010.01); H01M 4/02 (2006.01)
CPC H01M 4/587 (2013.01) [H01M 4/0404 (2013.01); H01M 4/1393 (2013.01); H01M 4/1395 (2013.01); H01M 4/364 (2013.01); H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/661 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A negative electrode material, comprising:
a silicon-based material and a carbon material, wherein
peaks with a shift range of 1255-1355 cm−1 and 1575-1600 cm−1 in a Raman spectrum of the carbon material are a D peak of the carbon material and a G peak of the carbon material respectively, and peaks with a shift range of 1255-1355 cm−1 and 1575-1600 cm−1 in a Raman spectrum of the silicon-based material are a D peak of the silicon-based material and a G peak of the silicon-based material respectively, a scattering peak intensity ratio of D versus G peaks of the carbon material is A, and a scattering peak intensity ratio of D versus G peaks of the silicon-based material is B, and wherein, 0.15≤A≤0.9, 1.6≤B≤ 2.0, and 0.2<B−A<1.8.