US 12,334,485 B2
Display device for improving internal quantum efficiency
Jin Woo Choi, Seoul (KR); Min Woo Kim, Hwaseong-si (KR); Sung Kook Park, Suwon-si (KR); and Sung Eun Baek, Suwon-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., LTD., Yongin-si (KR)
Filed on May 27, 2022, as Appl. No. 17/827,369.
Claims priority of application No. 10-2021-0105689 (KR), filed on Aug. 10, 2021.
Prior Publication US 2023/0049635 A1, Feb. 16, 2023
Int. Cl. H01L 25/16 (2023.01); G09G 3/32 (2016.01); H01L 23/00 (2006.01); H10H 29/14 (2025.01)
CPC H01L 25/167 (2013.01) [H10H 29/142 (2025.01); G09G 3/32 (2013.01); G09G 2300/0426 (2013.01); G09G 2300/0842 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/80 (2013.01); H01L 24/92 (2013.01); H01L 2224/05073 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48157 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80132 (2013.01); H01L 2224/80805 (2013.01); H01L 2224/92 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/0133 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate;
a first light-emitting element, a second light-emitting element, and a third light-emitting element on the substrate, each of the first, second, and third light-emitting elements comprising a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer;
an opening defined by the second semiconductor layer and the third semiconductor layer of the third light-emitting element, such that a thickness of the second semiconductor layer overlapping the third light-emitting element is less than a thickness of the second semiconductor layer overlapping the first light-emitting element or the second light-emitting element; and
a wavelength conversion member located at the opening,
wherein the first light-emitting element and the third light-emitting element are configured to emit first light, and the second light-emitting element is configured to emit second light, and
wherein the wavelength conversion member is configured to convert the first light from the third light-emitting element into third light.