US 12,334,481 B2
Micro light-emitting diode
Chi-Heng Chen, MiaoLi County (TW); Kuang-Yuan Hsu, MiaoLi County (TW); Shen-Jie Wang, MiaoLi County (TW); Jyun-De Wu, MiaoLi County (TW); Yi-Ching Chen, MiaoLi County (TW); and Yi-Chun Shih, MiaoLi County (TW)
Assigned to PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed by PlayNitride Display Co., Ltd., MiaoLi County (TW)
Filed on Jun. 28, 2022, as Appl. No. 17/851,064.
Claims priority of application No. 111109528 (TW), filed on Mar. 16, 2022.
Prior Publication US 2023/0299059 A1, Sep. 21, 2023
Int. Cl. H01L 25/075 (2006.01); H01L 33/10 (2010.01); H01L 33/38 (2010.01); H10H 20/814 (2025.01); H10H 20/831 (2025.01); H01L 23/00 (2006.01); H10H 20/01 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01)
CPC H01L 25/0756 (2013.01) [H10H 20/814 (2025.01); H10H 20/8312 (2025.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/92 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/29124 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/29147 (2013.01); H01L 2224/29186 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/73103 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/9211 (2013.01); H01L 2224/92143 (2013.01); H01L 2924/0541 (2013.01); H01L 2924/0543 (2013.01); H01L 2924/05442 (2013.01); H10H 20/01335 (2025.01); H10H 20/0137 (2025.01); H10H 20/018 (2025.01); H10H 20/824 (2025.01); H10H 20/825 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A micro light-emitting diode (micro-LED) comprising:
an epitaxial structure comprising:
a first stack layer comprising a first semiconductor layer, a second semiconductor layer and a first active layer, wherein the first active layer is disposed between the first semiconductor layer and the second semiconductor layer;
a second stack layer comprising a third semiconductor layer, a fourth semiconductor layer and a second active layer, wherein the second active layer is disposed between the third semiconductor layer and the fourth semiconductor layer;
a third stack layer comprising a fifth semiconductor layer, a sixth semiconductor layer and a third active layer, wherein the third active layer is disposed between the fifth semiconductor layer and the sixth semiconductor layer, the first stack layer is disposed above the third stack layer, and the second stack layer is disposed between the first stack layer and the third stack layer, wherein the first stack layer, the second stack layer and the third stack layer are configured to respectively emit three different light-emitting colors;
a bonding layer, disposed between the second stack layer and the third stack layer; and
at least one etch stop layer, disposed at least between the first active layer and the second active layer, and relatively far away from the first semiconductor layer and the fourth semiconductor layer; and
a plurality of electrodes, respectively electrically connected to the first stack layer, the second stack layer and the third stack layer, wherein at least one electrode contacts the etch stop layer,
wherein the etch stop layer contacts both the second semiconductor layer and the third semiconductor layer.