US 12,334,470 B2
Chip packaging structure and related inner lead bonding method
Ying-Chen Chang, Hsinchu County (TW); Po-Chi Chen, Hsinchu County (TW); and Kuo-Wei Tseng, Hsinchu County (TW)
Assigned to Sitronix Technology Corp., Hsinchu County (TW)
Filed by Sitronix Technology Corp., Hsinchu County (TW)
Filed on Jun. 30, 2020, as Appl. No. 16/916,136.
Application 16/916,136 is a continuation of application No. 15/792,767, filed on Oct. 25, 2017, abandoned.
Claims priority of provisional application 62/412,825, filed on Oct. 25, 2016.
Prior Publication US 2020/0335474 A1, Oct. 22, 2020
Int. Cl. H01L 23/498 (2006.01); H01L 23/00 (2006.01)
CPC H01L 24/81 (2013.01) [H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 23/49811 (2013.01); H01L 23/49838 (2013.01); H01L 23/4985 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13013 (2013.01); H01L 2224/13019 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/16013 (2013.01); H01L 2224/16014 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/16502 (2013.01); H01L 2224/73253 (2013.01); H01L 2224/81097 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81345 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81805 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A lead bonding method for a chip packaging structure, wherein the chip packaging structure comprises a chip and a film substrate, comprising:
making a first bonding surface of a gold bump of the chip contact with a lead of the film substrate, wherein a width of the gold bump is smaller than a width of the lead, and wherein at least the first bonding surface or one of a plurality of side walls of the gold bump is a non-smooth surface;
heating the gold bump and the lead up to a temperature range to form a eutectic material coverage between the gold bump and the lead, wherein the temperature range is from 400 to 500 Celsius degrees; and
holding on for a predetermined period to make the first bonding surface and at least one of the plurality of side walls of the gold bump covered by the eutectic material coverage.