US 12,334,463 B2
Semiconductor structure having copper pillar within solder bump and manufacturing method thereof
Hsih-Yang Chiu, Taoyuan (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 30, 2022, as Appl. No. 17/853,978.
Prior Publication US 2024/0006360 A1, Jan. 4, 2024
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/13 (2013.01) [H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/05 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11622 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13014 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13541 (2013.01); H01L 2224/13553 (2013.01); H01L 2224/13561 (2013.01); H01L 2224/1358 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13639 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/13666 (2013.01); H01L 2224/13687 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/81203 (2013.01); H01L 2924/3841 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate having a first pad disposed thereon and a passivation at least partially surrounding the pad; and
a conductive bump structure disposed over the substrate and the pad,
wherein the conductive bump structure comprises a first bump portion disposed over the passivation and the pad, a conductive pillar disposed over the first bump portion, a second bump portion disposed over and surrounding the conductive pillar, and an interfacial layer surrounding the conductive pillar, wherein the interfacial layer is made of dielectric material;
wherein the first bump portion and the second bump portion are made of same material;
wherein the first bump portion is softer than the conductive pillar;
wherein the first bump portion is separated from the second bump portion by the interfacial layer to prevent an electrical contact between the first bump portion and the second bump portion;
wherein the second bump portion has two convex sidewalls and a flat top surface;
wherein the second bump portion is deformable by force;
wherein a width of the second bump portion between the two convex sidewalls is greater than a width of the first bump portion;
wherein the conductive pillar is separated from the first bump portion and the second bump portion by the interfacial layer to prevent an electrical contact between the conductive pillar and the first bump portion, and between the conductive pillar and the second bump portion.