US 12,334,461 B2
Bonding structure using two oxide layers with different stress levels, and related method
Jorge A. Lubguban, Danbury, CT (US); Sarah H. Knickerbocker, Poughkeepsie, NY (US); Lloyd Burrell, Poughkeepsie, NY (US); John J. Garant, Poughkeepsie, NY (US); and Matthew C. Gorfien, Saratoga Springs, NY (US)
Assigned to GLOBALFOUNDRIES U.S. INC., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Sep. 6, 2022, as Appl. No. 17/929,790.
Prior Publication US 2024/0079360 A1, Mar. 7, 2024
Int. Cl. H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01)
CPC H01L 24/08 (2013.01) [H01L 24/05 (2013.01); H01L 24/80 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80379 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bonding structure for a semiconductor substrate, the bonding structure comprising:
a first oxide layer on the semiconductor substrate; and
a second oxide layer on the first oxide layer, the second oxide layer for bonding to another structure,
wherein the second oxide layer has a higher stress level than the first oxide layer, and the second oxide layer is thinner than the first oxide layer.