| CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01)] | 13 Claims |

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1. A semiconductor device, comprising:
a substrate having a top side, a bottom side, a dielectric structure, and a conductive structure;
a first electronic component on the top side of the substrate;
a second electronic component on the bottom side of the substrate;
an encapsulant structure comprising an encapsulant bottom portion on the bottom side of the substrate and encapsulating the second electronic component;
a conductive pillar in the encapsulant bottom portion, the conductive pillar including a top side oriented toward the substrate, a bottom side oriented away from the substrate, and a linear sidewall located between the top side and the bottom side; and
an internal interconnect coupling the conductive pillar to the conductive structure of the substrate;
wherein the internal interconnect comprises solder and the conductive pillar comprises copper; and
wherein a height of the conductive pillar is less than or equal to a height of the encapsulant bottom portion, and wherein the conductive pillar electrically connects the conductive structure of the substrate to a circuit external to the encapsulant structure.
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