| CPC H01L 23/5389 (2013.01) [H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 21/78 (2013.01); H01L 23/3121 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01)] | 13 Claims | 

| 
               1. A semiconductor device, comprising: 
            a substrate having a top side, a bottom side, a dielectric structure, and a conductive structure; 
                a first electronic component on the top side of the substrate; 
                a second electronic component on the bottom side of the substrate; 
                an encapsulant structure comprising an encapsulant bottom portion on the bottom side of the substrate and encapsulating the second electronic component; 
                a conductive pillar in the encapsulant bottom portion, the conductive pillar including a top side oriented toward the substrate, a bottom side oriented away from the substrate, and a linear sidewall located between the top side and the bottom side; and 
                an internal interconnect coupling the conductive pillar to the conductive structure of the substrate; 
                wherein the internal interconnect comprises solder and the conductive pillar comprises copper; and 
                wherein a height of the conductive pillar is less than or equal to a height of the encapsulant bottom portion, and wherein the conductive pillar electrically connects the conductive structure of the substrate to a circuit external to the encapsulant structure. 
               |