US 12,334,446 B2
Semiconductor package and method
Jiun Yi Wu, Zhongli (TW); Chen-Hua Yu, Hsinchu (TW); and Chung-Shi Liu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jun. 17, 2024, as Appl. No. 18/745,613.
Application 18/745,613 is a division of application No. 17/412,966, filed on Aug. 26, 2021, granted, now 12,051,650.
Prior Publication US 2024/0339408 A1, Oct. 10, 2024
Int. Cl. H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 23/00 (2006.01)
CPC H01L 23/5383 (2013.01) [H01L 21/4857 (2013.01); H01L 21/486 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first plurality of redistribution layers on a first substrate;
forming a first plurality of connectors on the first plurality of redistribution layers;
singulating the first substrate, the first plurality of redistribution layers, and the first plurality of connectors into a plurality of local interconnect structures, a first local interconnect structure of the plurality of local interconnect structures comprising:
a singulated portion of the first substrate;
a singulated portion of the first plurality of redistribution layers on the singulated portion of the first substrate;
a second plurality of connectors on the singulated portion of the first plurality of redistribution layers, the second plurality of connectors being a subset of the first plurality of connectors;
attaching the first local interconnect structure to a second substrate;
forming a first encapsulant over the first local interconnect structure and the second substrate;
removing a top portion of the first encapsulant and removing the singulated portion of the first substrate from the first local interconnect structure;
forming a first redistribution structure over a first side of the first local interconnect structure and the first encapsulant;
removing the first local interconnect structure, the first encapsulant, and the first redistribution structure from the second substrate and attaching the first redistribution structure to a third substrate;
forming a second redistribution structure over a second side of the first local interconnect structure and the first encapsulant, the second side being opposite the first side; and
attaching a first integrated circuit die and a second integrated circuit die to the second redistribution structure, the first integrated circuit die being electrically coupled to the second integrated circuit die through the first local interconnect structure.