US 12,334,442 B2
Dielectric caps for power and signal line routing
Nicholas Anthony Lanzillo, Wynantskill, NY (US); Ruilong Xie, Niskayuna, NY (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); Hosadurga Shobha, Niskayuna, NY (US); and Huai Huang, Clifton Park, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 31, 2022, as Appl. No. 17/899,740.
Prior Publication US 2024/0071929 A1, Feb. 29, 2024
Int. Cl. H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/5329 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5286 (2013.01); H01L 23/53228 (2013.01); H01L 23/53242 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor interconnect structure, comprising:
a plurality of first metal lines and a plurality of second metal lines disposed vertically adjacent each other relative to a substrate; and
a plurality of first and second caps disposed on the respective plurality of first metal lines and the plurality of second metal lines, the first caps comprising a first dielectric material and the second caps comprising a second dielectric material different from the first dielectric material.