US 12,334,433 B2
Semiconductor device and method of fabricating the same
Sih-Hao Liao, New Taipei (TW); Hung-Jui Kuo, Hsinchu (TW); and Yu-Hsiang Hu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/876,573.
Application 16/876,086 is a division of application No. 15/992,200, filed on May 30, 2018, granted, now 10,658,287, issued on May 19, 2020.
Application 17/876,573 is a continuation of application No. 16/876,086, filed on May 17, 2020, granted, now 11,450,603.
Prior Publication US 2022/0367349 A1, Nov. 17, 2022
Int. Cl. H01L 23/522 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01); H10D 84/03 (2025.01); H10D 88/00 (2025.01)
CPC H01L 23/5226 (2013.01) [H01L 21/31051 (2013.01); H01L 21/7684 (2013.01); H01L 21/76885 (2013.01); H01L 23/3121 (2013.01); H01L 23/5384 (2013.01); H01L 24/09 (2013.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01); H01L 2224/0231 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02379 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant, laterally encapsulating the semiconductor die, wherein a surface of the encapsulant is substantially level with an active surface of the semiconductor die; and
a redistribution structure disposed on the active surface of the semiconductor die and electrically coupled to the semiconductor die, and the redistribution structure comprising:
a dielectric layer;
a conductive via in the dielectric layer, the conductive via comprising a pillar portion embedded in the dielectric layer and a protruding portion protruding from the pillar portion, wherein the protruding portion has a tapered sidewall and a top surface connecting to the tapered sidewall, wherein the top surface of the protruding portion is substantially planar; and
a redistribution wiring electrically coupled to the conductive via.