CPC H01L 23/5226 (2013.01) [H01L 21/31051 (2013.01); H01L 21/7684 (2013.01); H01L 21/76885 (2013.01); H01L 23/3121 (2013.01); H01L 23/5384 (2013.01); H01L 24/09 (2013.01); H10D 84/038 (2025.01); H10D 88/01 (2025.01); H01L 2224/0231 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02379 (2013.01)] | 20 Claims |
1. A semiconductor device, comprising:
a semiconductor die;
an encapsulant, laterally encapsulating the semiconductor die, wherein a surface of the encapsulant is substantially level with an active surface of the semiconductor die; and
a redistribution structure disposed on the active surface of the semiconductor die and electrically coupled to the semiconductor die, and the redistribution structure comprising:
a dielectric layer;
a conductive via in the dielectric layer, the conductive via comprising a pillar portion embedded in the dielectric layer and a protruding portion protruding from the pillar portion, wherein the protruding portion has a tapered sidewall and a top surface connecting to the tapered sidewall, wherein the top surface of the protruding portion is substantially planar; and
a redistribution wiring electrically coupled to the conductive via.
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