| CPC H01L 23/5225 (2013.01) [H01L 23/5227 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/0616 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80379 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/0544 (2013.01)] | 16 Claims |

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1. A structure, comprising:
a first chip including a first dielectric over a substrate;
a second chip stacked over the first chip, the second chip including a second dielectric over the first dielectric;
an inductor arranged at least in part in the first dielectric of the first chip; and
an electromagnetic shield structure around the inductor, the electromagnetic shield structure comprising a lower shield portion extending at least partially through the first dielectric of the first chip and an upper shield portion extending at least partially through the second dielectric of the second chip, wherein the lower shield portion comprises first metal layers and vias stacked vertically in the first dielectric of the first chip and the upper shield portion comprises second metal layers and vias stacked vertically in the second dielectric of the second chip, the first metal layers of the electromagnetic shield structure each having a ring configuration around the inductor in the first dielectric of the first chip and the second metal layers of the electromagnetic shield structure each having a ring configuration in the second dielectric of the second chip above the first metal layers.
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